Sub-μm Patterning for Semipolar GaN Based Light Emitters
نویسندگان
چکیده
We present patterning of GaN layers by laser interference lithography to create threedimensional structures on a submicrometer scale. These structures exhibit surfaces comprised of semipolar crystal facets with reduced piezoelectric fields. The small dimensions of these 3D structures allow embedding. The resulting planarized surfaces considerably ease subsequent device processing. Structural characterization is shown and a first working light emitting device based on embedded submicrometer structures is presented.
منابع مشابه
Optimization of GaN Based Light Emitters With Semipolar Quantum Wells and Sub-μm Patterning Within the Active Zone
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